Merck
所有图片(1)

357294

Sigma-Aldrich

铟

foil, thickness 0.25 mm, 99.99% trace metals basis

所有图片(1)
别名:
Indium element
Empirical Formula (Hill Notation):
In
CAS号:
7440-74-6
分子量:
114.82
EC 号:
231-180-0
MDL编号:
MFCD00134048
PubChem化学物质编号:
24861902
NACRES:
NA.23

质量水平

100

蒸汽压

<0.01 mmHg ( 25 °C)

测定

99.99% trace metals basis

形式

foil

电阻率

8.37 μΩ-cm

厚度

0.25 mm

mp

156.6 °C (lit.)

密度

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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一般描述

Indium foil is widely used in nuclear facilities to capture thermal neutrons, because it shows a high cross section of neutron capture reaction. Hence, it may be used in dosemeters to measure exposure. Indium foils were studied for simultaneous monitoring neutron and photon intensities in a reactor core.

包装

100 cm2 in rigid mailer

数量

4.6g = 50×50mm；18.4g = 100×100mm；41.4g = 150×150mm

象形图

Health hazard
GHS08

警示用语：

Danger

危险声明

H372

危险分类

STOT RE 1 Inhalation

靶器官

Lungs

储存分类代码

6.1C - Combustible, acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 1

闪点(F)

Not applicable

闪点(C)

Not applicable

个人防护装备

dust mask type N95 (US), Eyeshields, Gloves

分析证书

请输入批号搜索分析证书（COA）。

原产地证书 (CofO)

请输入批号搜索原产地证书（COO）。

更多文件

Structure Search

Quotes and Ordering

Bulk Quote-Order Product
Recalibration of Indium foil for personnel screening in criticality accidents
Takada C, et al.
Radiation Protection Dosimetry, 144(1-4), 575-579 (2010)
Activation detection using indium foils for simultaneous monitoring neutron and photon intensities in a reactor core.
Chao JH and Chiang AC
Radiation Measurements, 45, 1024-1033 (2010)
Thirumaleshwara N Bhat et al.
Journal of nanoscience and nanotechnology, 13(1), 498-503 (2013-05-08)
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Dawei Deng et al.
Physical chemistry chemical physics : PCCP, 15(14), 5078-5083 (2013-03-02)
Exploring the synthesis and biomedical applications of biocompatible quantum dots (QDs) is currently one of the fastest growing fields of nanotechnology. Hence, in this work, we present a facile approach to produce water-soluble (cadmium-free) quaternary Zn-Ag-In-S (ZAIS) QDs. Their efficient
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