Merck
所有图片(3)

633097

Sigma-Aldrich

nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis

线性分子式:
Si
CAS号:
分子量:
28.09
EC 号:
MDL编号:
PubChem化学物质编号:
NACRES:
NA.23

质量水平

100

测定

≥98% trace metals basis

形式

nanopowder

粒径

<100 nm (TEM)

bp

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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象形图

Flame

警示用语:

Warning

危险声明

危险分类

Flam. Sol. 2

储存分类代码

4.1B - Flammable solid hazardous materials

WGK

WGK 3

闪点(F)

Not applicable

闪点(C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

分析证书

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原产地证书 (CofO)

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High temperature Boron-based thermoelectric materials
Mori T
Material Matters, 4, 37-37 (2009)
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image

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