Sigma-Aldrich

氧化钼(VI) puriss. p.a., 99.5%; CAS Number: 1313-27-5; EC Number: 215-204-7; Synonyms: 三氧化钼; Linear Formula: MoO3; find Sigma-Aldrich-69850 MSDS, related peer-reviewed papers, technical documents, similar products & more at Sigma-Aldrich

氧化钼(VI) puriss. p.a., 99.5% | Sigma-Aldrich

氧化钼(VI)

Temperature-programed reduction of molybdenum (VI) oxide and molybdenum (IV) oxide.

Kinetics and mechanism of molybdenum (VI) oxide reduction.		

High-activity MgO-supported CoMo hydrodesulfurization catalysts prepared by non-aqueous impregnation.	

The electronic structures at the MoO(3)∕Co interface were investigated using synchrotron-based ultraviolet and x-ray photoelectron spectroscopy. It was found that interfacial chemical reactions lead to the reduction of Mo oxidation states and the formation of Co-O bonds. These interfacial chemical reactions also induce a large interface dipole, which significantly increases the work function of the cobalt substrate. In addition, two interface states located at 1.0 and 2.0 eV below the Fermi level are identified. These two states overlap at film thickness of between 2-4 nm, which suggests the MoO(3) intermediate layer may facilitate ohmic charge transport.

A synchrotron-based photoemission study of the MoO3∕Co interface.

A heterojunction photodiode with NIR photoresponse using solution processable pyrite FeS(2) nanocrystal ink is demonstrated which has the advantages of earth-abundance and non-toxicity. The device consists of a FeS(2) nanocrystal (NC) thin film sandwiched with semiconducting metal oxides with a structure of ITO/ZnO/FeS(2) NC/MoO(3) /Au, which exhibits an excellent photoresponse with a spectral response extended to NIR wavelengths of up to 1150 nm and a high photocurrent/dark current ratio of up to 8000 at -1 V under AM1.5 illumination (100 mW cm(-2) ).

Solution-processable pyrite FeS(2) nanocrystals for the fabrication of heterojunction photodiodes with visible to NIR photodetection.

MoO3 films spin-coated from a nanoparticle suspension for efficient hole-injection in organic electronics.

Efficient, large area ITO-and-PEDOT-free organic solar cell sub-modules.

Efficient single-layer polymer light-emitting diodes.

A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS(2) phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

Single-layer MoS2 phototransistors.

We fabricated and demonstrated improved organic light emitting diodes (OLEDs) in a thin film architecture of indium tin oxide (ITO)/ molybdenum trioxide (MoO3) (20 nm)/N,N'-Di(naphth-2-yl)-N,N'-diphenyl-benzidine (NPB) (50 nm)/ tris-(8-hydroxyquinoline) (Alq3) (70 nm)/Mg:Ag (200 nm) using an oblique angle deposition technique by which MoO3 was deposited at oblique angles (θ) with respect to the surface normal. It was found that, without sacrificing the power efficiency of the device, the device current efficiency and external quantum efficiency were significantly enhanced at an oblique deposition angle of θ=60° for MoO3.

Improved performance of organic light-emitting diodes with MoO3 interlayer by oblique angle deposition.

We report on a sol-gel-based technique to fabricate MoO(3) thin films as a hole-injection layer for solution-processed or thermally evaporated organic solar cells. The solution-processed MoO(3) (sMoO(3)) films are demonstrated to have equal performance to hole-injection layers composed of either PEDOT:PSS or thermally evaporated MoO(3) (eMoO(3)), and the annealing temperature at which the sol-gel layer begins to work is consistent with the thermodynamic analysis of the process. Finally, the shelf lifetime of devices made with the sMoO(3) is similar to equivalent devices prepared with a eMoO(3) hole-injection layer.

Solution-processed MoO₃ thin films as a hole-injection layer for organic solar cells.

The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of a MoO(3) interlayer between the PbS colloidal quantum dot film and the top-contact anode. Through a combination of current-voltage characterization, circuit modeling, Mott-Schottky analysis, and external quantum efficiency measurements performed with bottom- and top-illumination, these enhancements are shown to stem from the elimination of a reverse-bias Schottky diode present at the PbS/anode interface. The incorporation of the high-work-function MoO(3) layer pins the Fermi level of the top contact, effectively decoupling the device performance from the work function of the anode and resulting in a high open-circuit voltage (0.59 ± 0.01 V) for a range of different anode materials. Corresponding increases in short-circuit current and fill factor enable 1.5-fold, 2.3-fold, and 4.5-fold enhancements in photovoltaic device efficiency for gold, silver, and ITO anodes, respectively, and result in a power conversion efficiency of 3.5 ± 0.4% for a device employing a gold anode.

Improved current extraction from ZnO/PbS quantum dot heterojunction photovoltaics using a MoO3 interfacial layer.

An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to that using a conventional PEDOT:PSS layer without annealing at an elevated temperature.

Solution processed MoO3 interfacial layer for organic photovoltaics prepared by a facile synthesis method.

Design of transparent anodes for resonant cavity enhanced light harvesting in organic solar cells.

Small-molecule organic solar cells with microcavity structures utilizing very thin solar-absorbing active layers are simulated and fabricated. By carefully fine-tuning the in-cell spacer layer and out-of-cell capping layer, highly efficient top-illuminated indium tin oxide-free solar cells are created on glass and flexible polyethylene terephthalate substrates with efficiencies of up to 5.5% and 5%, respectively.

Device engineering for highly efficient top-illuminated organic solar cells with microcavity structures.

Large-area MoS(2) atomic layers are synthesized on SiO(2) substrates by chemical vapor deposition using MoO(3) and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS(2) monolayer. The TEM images verify that the synthesized MoS(2) sheets are highly crystalline.

Synthesis of large-area MoS2 atomic layers with chemical vapor deposition.

During the last few years, transition metal oxides (TMO) such as molybdenum tri-oxide (MoO(3) ), vanadium pent-oxide (V(2) O(5) ) or tungsten tri-oxide (WO(3) ) have been extensively studied because of their exceptional electronic properties for charge injection and extraction in organic electronic devices. These unique properties have led to the performance enhancement of several types of devices and to a variety of novel applications. TMOs have been used to realize efficient and long-term stable p-type doping of wide band gap organic materials, charge-generation junctions for stacked organic light emitting diodes (OLED), sputtering buffer layers for semi-transparent devices, and organic photovoltaic (OPV) cells with improved charge extraction, enhanced power conversion efficiency and substantially improved long term stability. Energetics in general play a key role in advancing device structure and performance in organic electronics; however, the literature provides a very inconsistent picture of the electronic structure of TMOs and the resulting interpretation of their role as functional constituents in organic electronics. With this review we intend to clarify some of the existing misconceptions. An overview of TMO-based device architectures ranging from transparent OLEDs to tandem OPV cells is also given. Various TMO film deposition methods are reviewed, addressing vacuum evaporation and recent approaches for solution-based processing. The specific properties of the resulting materials and their role as functional layers in organic devices are discussed.

Transition metal oxides for organic electronics: energetics, device physics and applications.

Highly efficient single-layer organic light-emitting diodes (OLEDs) are demonstrated using new N-heterocyclic carbazole-based host materials. Phosphorescent OLEDs with a structure of ITO/MoO(3) /host/host:dopant/host/Cs(2) CO(3) /Al are fabricated in which the new materials act simultaneously as electron-transport, hole-transport, and host layer. Devices with maximum current and external quantum efficiencies of 92.2 cd A(-1) and 26.8% are achieved, the highest reported to date for a single-layer OLED.

氧化钼(VI)

puriss. p.a., 99.5%

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