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  • Effect of arsenite-oxidizing bacterium B. laterosporus on arsenite toxicity and arsenic translocation in rice seedlings.

Effect of arsenite-oxidizing bacterium B. laterosporus on arsenite toxicity and arsenic translocation in rice seedlings.

Ecotoxicology and environmental safety (2015-05-31)
Gui-Di Yang, Wan-Ying Xie, Xi Zhu, Yi Huang, Xiao-Jun Yang, Zong-Qing Qiu, Zhen-Mao Lv, Wen-Na Wang, Wen-Xiong Lin
摘要

Arsenite [As (III)] oxidation can be accelerated by bacterial catalysis, but the effects of the accelerated oxidation on arsenic toxicity and translocation in rice plants are poorly understood. Herein we investigated how an arsenite-oxidizing bacterium, namely Brevibacillus laterosporus, influences As (III) toxicity and translocation in rice plants. Rice seedlings of four cultivars, namely Guangyou Ming 118 (GM), Teyou Hang II (TH), Shanyou 63 (SY) and Minghui 63 (MH), inoculated with or without the bacterium were grown hydroponically with As (III) to investigate its effects on arsenic toxicity and translocation in the plants. Percentages of As (III) oxidation in the solutions with the bacterium (100%) were all significantly higher than those without (30-72%). The addition of the bacterium significantly decreased As (III) concentrations in SY root, GM root and shoot, while increased the As (III) concentrations in the shoot of SY, MH and TH and in the root of MH. Furthermore, the As (III) concentrations in the root and shoot of SY were both the lowest among the treatments with the bacterium. On the other hand, its addition significantly alleviated the As (III) toxicity on four rice cultivars. Among the treatments amended with B. laterosporus, the bacterium showed the best remediation on SY seedlings, with respect to the subdued As (III) toxicity and decreased As (III) concentration in its roots. These results indicated that As (III) oxidation accelerated by B. laterosporus could be an effective method to alleviate As (III) toxicity on rice seedlings.

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锗, powder, −100 mesh, ≥99.999% trace metals basis
Sigma-Aldrich
锗, chips, 99.999% trace metals basis
Sigma-Aldrich
锗, powder, −100 mesh, ≥99.99% trace metals basis
锗, disks, 15mm, thickness 1.0mm, polycrystalline, 100%
锗, sheet, 50x50mm, thickness 1.0mm, polycrystalline, 99.999%
锗, disks, 20mm, thickness 1.0mm, single crystal, 100%
锗, microfoil, 25x25mm, thinness 0.25μm, specific density 166.3μg/cm2, 6 micron aluminum permanent support, 100%
锗, microfoil, 25x25mm, thinness 0.5μm, specific density 333μg/cm2, 6 micron aluminum permanent support, 100%
锗, microfoil, 50x50mm, thinness 0.25μm, specific density 166.3μg/cm2, 6 micron aluminum permanent support, 100%
锗, rod, 25mm, diameter 2.0mm, polycrystalline, n-type, 99.999%
锗, rod, 25mm, diameter 5mm, polycrystalline, n-type, 99.999%
锗, rod, 50mm, diameter 5mm, polycrystalline, n-type, 99.999%
锗, rod, 6mm, diameter 6.0mm, single crystal, 100%
锗, sheet, 10x10mm, thickness 0.25mm, polycrystalline, 99.999%
锗, sheet, 10x10mm, thickness 0.5mm, single crystal, -111, 100%
锗, sheet, 10x10mm, thickness 0.6mm, single crystal, -111, 100%
锗, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
锗, sheet, 25x25mm, thickness 1.0mm, single crystal, 99.999%
锗, sheet, 25x25mm, thickness 3.0mm, polycrystalline, 99.999%
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锗, sheet, 50x50mm, thickness 0.5mm, single crystal, 99.999%
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锗, sheet, 6x6mm, thickness 1.0mm, polycrystalline, 99.999%
锗, sheet, 7x24mm, thickness 1.0mm, polycrystalline, 99.999%
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锗, chips, 99.999% trace metals basis