579211

Sigma-Aldrich

Tetrakis(dimethylamido)zirconium(IV)

electronic grade, ≥99.99% trace metals basis

Synonym(s):
Tetrakis(dimethylamino)zirconium(IV), TDMAZ
Linear Formula:
[(CH3)2N]4Zr
CAS Number:
Molecular Weight:
267.53
MDL number:
PubChem Substance ID:
NACRES:
NA.23

grade

electronic grade

Quality Level

assay

≥99.99% trace metals basis

form

solid

reaction suitability

core: zirconium

mp

57-60 °C (lit.)

storage temp.

2-8°C

SMILES string

CN(C)[Zr](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Zr/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

DWCMDRNGBIZOQL-UHFFFAOYSA-N

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Application

Tetrakis(dimethylamido) zirconium (IV) may be used as a precursor for atomic layer deposition of zirconium which find applications ranging from gas sensors to high-k dielectrics in microelectronics.

Packaging

5 g in glass bottle

Pictograms

FlameExclamation mark

Signal Word

Danger

hazcat

Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3 - Water-react. 2

Target Organs

Respiratory system

Supp Hazards

EUH014

storage_class_code

4.3 - Hazardous materials, which set free flammable gases upon contact with water

WGK Germany

WGK 3

Flash Point(F)

No data available

Flash Point(C)

No data available

Personal Protective Equipment

dust mask type N95 (US),Eyeshields,Gloves

Certificate of Analysis

Certificate of Origin

Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films.
Hausmann DM & Gordon RG
Journal of Crystal Growth, 249.1, 251-261 (2003)
Atomic layer deposition of ZrO2 and HfO2 nanotubes by template replication
Gu D, et al.
Electrochemical and Solid-State Letters, 12.4, K25-K28 (2009)
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