Skip to Content
MilliporeSigma

237264

Resolve-Al La

99%

Synonym(s):

La(tmhd)3, Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum

Sign In to View Organizational & Contract Pricing.

Select a Size

Pricing and availability is not currently available.

About This Item

Linear Formula:
La(OCC(CH3)3CHCOC(CH3)3)3
CAS Number:
Molecular Weight:
688.71
NACRES:
NA.21
PubChem Substance ID:
UNSPSC Code:
12142201
MDL number:
Assay:
99%
Bp:
370 °C (lit.)

Skip To

Technical Service
Need help? Our team of experienced scientists is here for you.
Let Us Assist

InChI

1S/3C11H20O2.La/c3*1-10(2,3)8(12)7-9(13)11(4,5)6;/h3*7,12H,1-6H3;/q;;;+3/p-3/b3*8-7-;

SMILES string

CC(C)(C)C(=O)\C=C(/O[Yb](O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)C(C)(C)C

InChI key

IXHLTRHDDMSNAP-LWTKGLMZSA-K

assay

99%

form

powder or crystals

bp

370 °C (lit.)

mp

128-131 °C (lit.)

Compare Similar Items

View Full Comparison

Show Differences

1 of 4

This Item
575208430609665193
assay

99%

assay

≥99.99% trace metals basis

assay

99.999% trace metals basis

assay

98%

form

powder or crystals

form

powder

form

-

form

solid

bp

370 °C (lit.)

bp

-

bp

-

bp

-

mp

128-131 °C (lit.)

mp

-

mp

-

mp

-

Other Notes

Check out ChemisTwin®, our brand new online portal for identity confirmation and quantification of NMR spectra. Learn more or reach out to us for a free trial.

Legal Information

Storage Class

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)


Choose from one of the most recent versions:

Certificates of Analysis (COA)

Lot/Batch Number

Don't see the Right Version?

If you require a particular version, you can look up a specific certificate by the Lot or Batch number.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

MOCVD of lanthanum oxides from La (tmhd)3 and La (tmod)3 precursors: A thermal and kinetic investigation.
Bedoya C, et al.
Chem. Vap. Deposition, 12(1), 46-53 (2006)
Structural and electrical properties of a La2O3 thin film as a gate dielectric.
Jun JH, et al.
The Journal of the Korean Physical Society, 11(6) (2002)
Study on the precursors for La2O3 thin films deposited on silicon substrate.
Jun J, et al.
Journal of Materials Science Letters, 21(23), 1847-1849 (2002)

Related Content

Questions

Reviews

No rating value

Active Filters

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service