All Photos(3)

241903

Sigma-Aldrich

Aluminum nitride

powder, 10 μm, ≥98%

Linear Formula:
AlN
CAS Number:
Molecular Weight:
40.99
EC Number:
MDL number:
PubChem Substance ID:
NACRES:
NA.23

assay

≥98%

form

powder

particle size

10 μm

mp

>2200 °C (lit.)

density

3.26 g/mL at 25 °C (lit.)

SMILES string

N#[Al]

InChI

1S/Al.N

InChI key

PIGFYZPCRLYGLF-UHFFFAOYSA-N

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Related Categories

Pictograms

Health hazardEnvironment

Signal Word

Danger

Hazard Statements

Hazard Classifications

Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation

Target Organs

Lungs

Storage Class Code

4.3 - Hazardous materials, which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificate of Analysis

Certificate of Origin

Emmanuel Defay et al.
IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 58(12), 2516-2520 (2011-12-01)
A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to
Simona Petroni et al.
The Analyst, 137(22), 5260-5264 (2012-09-27)
The integration of a polycrystalline material such as aluminum nitride (AlN) on a flexible substrate allows the realization of elastic tactile sensors showing both piezoelectricity and significant capacitive variation under normal stress. The application of a normal stress on AlN
Ruyen Ro et al.
IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 57(1), 46-51 (2009-12-31)
In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al
Ning Liu et al.
ACS applied materials & interfaces, 1(9), 1927-1930 (2010-04-02)
Patterned growth of AlN nanocones on a Ni-coated Si substrate is demonstrated through the reaction between AlCl(3) and NH(3) at 700 degrees C with Mo grid as a mask. The AlN nanocones are selectively deposited in the hollow region of
A Lupu et al.
Optics express, 20(11), 12541-12549 (2012-06-21)
The aim of the present paper was to determine the index variation in the GaN/AlN heterostructures related to the population/depletion of the quantum well fundamental state leading to the absorption variation in the spectral domain around 1.5 µm. The variation

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