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264059

Sigma-Aldrich

Indium

foil, thickness 0.127 mm, 99.99% trace metals basis

Synonym(s):
Indium element
Empirical Formula (Hill Notation):
In
CAS Number:
Molecular Weight:
114.82
EC Number:
MDL number:
PubChem Substance ID:
NACRES:
NA.23

Quality Level

vapor pressure

<0.01 mmHg ( 25 °C)

assay

99.99% trace metals basis

form

foil

resistivity

8.37 μΩ-cm

thickness

0.127 mm

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Application

Indium foil is thermal interface material with high conductance that is used in cryogenics. It can also be used as indium vapor source for the preparation of indium nitride nanowires on a silicon substrate. It may also be used in the time of flight secondary ion mass spectroscopy (ToF-SIMS) for the analysis of powder samples.

Packaging

2.3, 9.2 g in rigid mailer

Quantity

2.3 g = 50 × 50 mm; 9.2 g = 100 × 100 mm

Pictograms

Health hazard

Signal Word

Danger

Hazard Statements

Precautionary Statements

Hazard Classifications

STOT RE 1 Inhalation

Target Organs

Lungs

Storage Class Code

6.1C - Combustible, acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US),Eyeshields,Gloves

Certificate of Analysis

Certificate of Origin

Characteristic fragment ions from lignin and polysaccharides in ToF-SIMS
Tokareva EN, et al.
Wood Science and Technology, 45(4), 767-785 (2011)
Cryogen-free operation of 10 V programmable Josephson voltage standards
Howe L, et al.
IEEE Transactions on Applied Superconductivity, 23(3) (2012)
Selective-area growth of indium nitride nanowires on gold-patterned Si (100) substrates
Liang CH, et al.
Applied Physics Letters, 81(1), 22-24 (2002)
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne

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