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277959

Sigma-Aldrich

Indium

powder, 99.99% trace metals basis

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Empirical Formula (Hill Notation):
In
CAS Number:
Molecular Weight:
114.82
EC Number:
MDL number:
PubChem Substance ID:
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 25 °C)

Quality Level

Assay

99.99% trace metals basis

form

powder

resistivity

8.37 μΩ-cm

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

SMILES string

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Indium powder, 99.99% trace metals basis

Sigma-Aldrich

277959

Indium

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Indium wire, diam. 1.0&#160;mm, 99.99% trace metals basis

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Indium wire, diam. 0.5&#160;mm, 99.995% trace metals basis

Sigma-Aldrich

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Indium

form

powder

form

powder

form

wire

form

wire

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

resistivity

8.37 μΩ-cm

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

mp

156.6 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

density

7.3 g/mL at 25 °C (lit.)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

vapor pressure

<0.01 mmHg ( 25 °C)

General description

Indium is a silvery-white soft metal with aface-centered tetragonal crystalline structure. It becomes superconductingat 3.37 K. It improves alloys′ hardness, corrosion resistance, andstrength.

Application

Indium can be used as a:

  • Dopant to tune the electrical and photoelectrical properties of CdSe nanowires.
  • Negative electrode material for Mg-ion batteries.
  • Reducing agent in many organic transformations because of its low first ionization potential.

Pictograms

FlameExclamation mark

Signal Word

Danger

Hazard Classifications

Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

4.1B - Flammable solid hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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T1503
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25G
Pack Size/Quantity

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1000309185

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Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping.
Zhubing He et al.
Small (Weinheim an der Bergstrasse, Germany), 5(3), 345-350 (2008-12-06)
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed

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