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481769

Gallium nitride

99.9% trace metals basis

Synonym(s):

Gallium mononitride, Gallium mononitride (GaN)

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About This Item

Linear Formula:
GaN
CAS Number:
25617-97-4
Molecular Weight:
83.73
NACRES:
NA.23
PubChem Substance ID:
24871779
UNSPSC Code:
12352300
EC Number:
247-129-0
MDL number:
MFCD00016108

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Product Name

Gallium nitride, 99.9% trace metals basis

InChI key

JMASRVWKEDWRBT-UHFFFAOYSA-N

InChI

1S/Ga.N

SMILES string

N#[Ga]

assay

99.9% trace metals basis

form

powder

mp

800 °C (lit.)

Quality Level

100

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This Item
399116450863229644
Gallium nitride 99.9% trace metals basis

Sigma-Aldrich

481769

Gallium nitride

Gallium(III) iodide 99.99% trace metals basis

Sigma-Aldrich

399116

Gallium(III) iodide

Gallium(III) bromide anhydrous, powder, 99.999% trace metals basis

Sigma-Aldrich

450863

Gallium(III) bromide

Gallium(III) nitrate hydrate crystals and lumps, 99.999% trace metals basis

Sigma-Aldrich

229644

Gallium(III) nitrate hydrate

assay

99.9% trace metals basis

assay

99.99% trace metals basis

assay

99.999% trace metals basis

assay

99.999% trace metals basis

form

powder

form

powder and chunks

form

powder

form

crystals and lumps

mp

800 °C (lit.)

mp

345 °C (subl.) (lit.)

mp

121.5 °C (lit.)

mp

110 °C (dec.) (lit.)

Quality Level

100

Quality Level

200

Quality Level

100

Quality Level

100

Application

Gallium nitride (GaN) is a wide band gap semiconducting material,[1] which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs),[2] and field effect transistors (FETs).[3] It can also be used as a transition metal dopant for spintronics-based applications.[4]

pictograms

Exclamation mark
GHS07

signalword

Warning

hcodes

H317

Hazard Classifications

Skin Sens. 1

Storage Class

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Faceshields, Gloves, type N95 (US)

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Certificates of Analysis (COA)

Lot/Batch Number
0000526243
0000526243
0000481507
0000481507
0000508616

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High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
Kim H, et al.
Nano Letters, 4(6), 1059-1062 (2004)
Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
Gallium nitride processing for electronics, sensors and spintronics, 2(2), 101-104 (2006)
Gallium nitride nanowire nanodevices
Huang Y, et al.
Nano Letters, 2(2), 101-104 (2002)
Gallium nitride as an electromechanical material
Rais-Zadeh M, et al.
Journal of Microelectromechanical Systems : A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems, 23(6), 1252-1271 (2014)
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