wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

Silicon element
Linear Formula:
CAS Number:
Molecular Weight:
MDL number:
PubChem Substance ID:

Quality Level


crystalline (cubic (a = 5.4037))
wafer (single side polished)


boron as dopant

diam. × thickness

3 in. × 0.5 mm


2355 °C (lit.)


1410 °C (lit.)


2.33 g/mL at 25 °C (lit.)

semiconductor properties

<111>, P-type

SMILES string




InChI key


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5 ea in ampule

Physical properties

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Personal Protective Equipment

dust mask type N95 (US),Eyeshields,Gloves


NONH for all modes of transport

WGK Germany


Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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