647705
Silicon
wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Quality Level
form
crystalline (cubic (a = 5.4037))
wafer
contains
boron as dopant
diam. × thickness
2 in. × 0.3 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
semiconductor properties
<111>, P-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Looking for similar products? Visit Product Comparison Guide
Related Categories
Packaging
Physical properties
Storage Class Code
13 - Non Combustible Solids
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Certificate of Analysis
Enter Lot Number to search for Certificate of Analysis (COA).
Certificate of Origin
Enter Lot Number to search for Certificate of Origin (COO).
Product Information Sheet
Quotes and Ordering
Articles
Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications
Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes
Protocols
Our photoresist kit was designed to have the necessary chemical components for each step in the lithographic process. The component materials are provided in pre-weighed quantities for your convenience. Etchants are available separately so that the proper etchant can be chosen for a variety of substrate choices.
Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.
Contact Technical Service