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651494

Gallium phosphide

(single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Gallium monophosphide

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About This Item

Linear Formula:
GaP
CAS Number:
12063-98-8
Molecular Weight:
100.70
NACRES:
NA.23
PubChem Substance ID:
24883833
UNSPSC Code:
12352300
EC Number:
235-057-2
MDL number:
MFCD00016109

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Product Name

Gallium phosphide, (single crystal substrate), <111>, diam. × thickness 2 in. × 0.5 mm

InChI key

HZXMRANICFIONG-UHFFFAOYSA-N

InChI

1S/Ga.P

SMILES string

[P]#[Ga]

form

(single crystal substrate)

resistivity

~0.3 Ω-cm

diam. × thickness

2 in. × 0.5 mm

mp

1480 °C

density

4.13 g/mL at 25 °C

semiconductor properties

<111>

Quality Level

100

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This Item
651486263273481769
Gallium phosphide (single crystal substrate), &#60;111&#62;, diam. × thickness 2&#160;in. × 0.5&#160;mm

Sigma-Aldrich

651494

Gallium phosphide

Gallium arsenide (single crystal substrate), &#60;100&#62;, diam. × thickness 2&#160;in. × 0.5&#160;mm

Sigma-Aldrich

651486

Gallium arsenide

Gallium 99.999% trace metals basis

Sigma-Aldrich

263273

Gallium

Gallium nitride 99.9% trace metals basis

Sigma-Aldrich

481769

Gallium nitride

form

(single crystal substrate)

form

(single crystal substrate)

form

(metallic liquid or solid (ambient temp dependent))

form

powder

mp

1480 °C

mp

-

mp

29.8 °C (lit.)

mp

800 °C (lit.)

density

4.13 g/mL at 25 °C

density

5.31 g/mL at 25 °C (lit.)

density

5.904 g/mL at 25 °C (lit.)

density

-

resistivity

~0.3 Ω-cm

resistivity

≥1E7 Ω-cm

resistivity

25.795 μΩ-cm, 30°C

resistivity

-

diam. × thickness

2 in. × 0.5 mm

diam. × thickness

2 in. × 0.5 mm

diam. × thickness

-

diam. × thickness

-

semiconductor properties

<111>

semiconductor properties

<100>

semiconductor properties

-

semiconductor properties

-

General description

Thermal expansion: 5.3 x 10-6/°C
Undoped (N-type semiconductor), carrier concentration = 2-6 × 1016 cm-3, EPD < 3 × 105 cm-2, growth technique = LEC

Physical form

cubic (a = 5.4505Å)

pictograms

Exclamation mark
GHS07

signalword

Warning

hcodes

H319,H335

Hazard Classifications

Eye Irrit. 2 - STOT SE 3

target_organs

Respiratory system

Storage Class

11 - Combustible Solids

wgk

WGK 2

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
MKBX6897V
MKBW8491V
10819AD

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David Richards et al.
Langmuir : the ACS journal of surfaces and colloids, 26(11), 8141-8146 (2010-02-04)
Gallium phosphide is a semiconductor material that can be used for the fabrication of optoelectronic devices. The report compares the ability of two similar organic molecules to form covalent bonds with the GaP(100) surface. Undecenoic acid (UDA) is a terminal
Cecilia E Linsmeier et al.
Biomaterials, 29(35), 4598-4604 (2008-09-20)
Neural devices may play an important role in the diagnosis and therapy of several clinical conditions, such as stroke, trauma or neurodegenerative disorders, by facilitating motor and pain control. Such interfaces, chronically implanted in the CNS, need to be biocompatible
Santosh Khanal et al.
Nanomedicine : nanotechnology, biology, and medicine, 6(6), 707-713 (2010-07-06)
The tear film is a dynamic multilayered structure. The interactions and the interfacial dynamics between the layers that occur during a blink cycle must be such that they allow for maintenance of a stable tear film. Attempts to understand these
Ivan Avrutsky et al.
Optics express, 18(19), 20370-20383 (2010-10-14)
Integrated chip-scale optical systems are an attractive platform for the implementation of non-linear optical interactions as they promise compact robust devices that operate reliably with lower power consumption compared to analogs based on bulk nonlinear crystals. The use of guided
G Chen et al.
Nano letters, 8(5), 1341-1346 (2008-04-22)
We report on investigations of the interaction of light with nanoscale antennae made from crystalline GaP nanowires (NWs). Using Raman scattering, we have observed strong optical antenna effects which we identify with internal standing wave photon modes of the wire.
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