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755133

Carbon nanotube, multi-walled

thin, <5% Metal Oxide(TGA)

Synonym(s):

NC-3100, MWCNT, MWNT, Multiwall carbon nanotube

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About This Item

CAS Number:
308068-56-6
MDL number:
MFCD00133992
UNSPSC Code:
12352103
NACRES:
NA.23

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Quality Level

100

form

powder

avg. diam. × L

9.5 nm × 1.5 μm , TEM

impurities

<5% Metal Oxide (TGA)

mp

3652-3697 °C (lit.)

density

~2.1 g/mL at 25 °C (lit.)

SMILES string

[C]

InChI key

OKTJSMMVPCPJKN-UHFFFAOYSA-N

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1 of 4

This Item
698849901002412988
Carbon nanotube, multi-walled thin, &lt;5% Metal Oxide(TGA)

Sigma-Aldrich

755133

Carbon nanotube, multi-walled

Carbon nanotube, multi-walled &gt;98% carbon basis, O.D. × L 6-13&#160;nm × 2.5-20&#160;&#956;m

Sigma-Aldrich

698849

Carbon nanotube, multi-walled

Carbon nanotube, multi-walled flake of bundled CNTs, &gt;95% carbon basis, O.D. × L 10-40&#160;nm × 0.5-1.5&#160;mm

Sigma-Aldrich

901002

Carbon nanotube, multi-walled

Carbon nanotube, multi-walled as-produced cathode deposit, &gt;7.5% MWCNT basis, O.D. × L 7-15&#160;nm × 0.5-10&#160;&#956;m, avg. no. of layers, 5 &#8209; 20

Sigma-Aldrich

412988

Carbon nanotube, multi-walled

form

powder

form

powder

form

-

form

powder

Quality Level

100

Quality Level

100

Quality Level

100

Quality Level

100

avg. diam. × L

9.5 nm × 1.5 μm , TEM

avg. diam. × L

-

avg. diam. × L

-

avg. diam. × L

-

impurities

<5% Metal Oxide (TGA)

impurities

-

impurities

-

impurities

-

mp

3652-3697 °C (lit.)

mp

3652-3697 °C (lit.)

mp

3652-3697 °C (lit.)

mp

3652-3697 °C (lit.)

density

~2.1 g/mL at 25 °C (lit.)

density

~2.1 g/mL at 25 °C (lit.)

density

~2.1 g/mL at 25 °C (lit.)

density

~2.1 g/mL at 25 °C (lit.)

General description

Multi walled carbon nanotubes (MWNTs, CNTs) were prepared by chemical vapor deposition (CVD). In chemical vapor deposition (CVD), a volatile precursor undergoes thermal decomposition at elevated temperatures to form a solid deposit on a substrate. Compared to other techniques, CVD produces greater yield of carbon nanotubes. Morphology and structure of the nanotubes can be easily tuned using CVD technique. The CNTs formed can be formed in bundles over a catalyst support or in patterns over substrates.1

Application

Applications include:
Electronics[1]
Sensors[2]
Composites
Energy Storage
Study of Life Science system[3]

Preparation Note

Catalytic Carbon Vapor Deposition (CCVD) Method

Legal Information

Product of Nanocyl, Inc.

Storage Class

11 - Combustible Solids

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

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Certificates of Analysis (COA)

Lot/Batch Number
MKCT5894
MKCP1138
MKCJ9621
MKCJ2009
MKCF0530

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Syeda Warisul Fatima et al.
International journal of biological macromolecules, 163, 1747-1758 (2020-09-23)
The chemical cross-linkers are difficult to be removed from the scaffold materials, which limit their application in tissue engineering; designing an efficient biocompatible hydrogel is though challenging is desirable. The aim of the present study was to immobilize microbial Transglutaminase
Dominick J Bindl et al.
ACS nano, 4(10), 5657-5664 (2010-10-07)
Semiconducting single-walled carbon nanotubes (s-SWCNTs) have strong near-infrared and visible absorptivity and exceptional charge transport characteristics, rendering them highly attractive semiconductor absorbers for photovoltaic and photodetector technologies. However, these applications are limited by a poor understanding of how photogenerated charges
Wai Li Ling et al.
ACS nano, 5(2), 730-737 (2011-01-11)
The classical pathway of complement is an essential component of the human innate immune system involved in the defense against pathogens as well as in the clearance of altered self-components. Activation of this pathway is triggered by C1, a multimolecular
Amin Salehi-Khojin et al.
ACS nano, 5(1), 153-158 (2010-12-29)
There has been recent controversy whether the response seen in carbon nanotube (CNT) chemiresistors is associated with a change in the resistance of the individual nanotubes or changes in the resistance of the junctions. In this study, we carry out

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