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772631

Sigma-Aldrich

Gallium

pieces, 99.99999% trace metals basis

Synonym(s):
Gallium element
Linear Formula:
Ga
CAS Number:
Molecular Weight:
69.72
EC Number:
MDL number:
PubChem Substance ID:
NACRES:
NA.23

Quality Level

assay

99.99999% trace metals basis

form

pieces
(metallic liquid or solid (ambient temp dependent))

resistivity

25.795 μΩ-cm, 30°C

bp

2403 °C (lit.)

mp

29.8 °C (lit.)

density

5.904 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

[Ga]

InChI

1S/Ga

InChI key

GYHNNYVSQQEPJS-UHFFFAOYSA-N

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Application

Gallium metal is used in many high technology applications including the growth of gallium semiconductor nanoparticles by MBE and as a catalyst for the formation of nanoscale semiconductors such as PbSe .

Packaging

5 g in poly bottle

Pictograms

CorrosionExclamation mark

Signal Word

Warning

Hazard Statements

Hazard Classifications

Acute Tox. 4 Oral - Aquatic Chronic 3 - Met. Corr. 1

Storage Class Code

8B - Non-combustible, corrosive hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificate of Analysis

Certificate of Origin

Jia Zhu et al.
Nano letters, 7(4), 1095-1099 (2007-03-14)
Lead chalcogenide nanostructures are good potential candidates for applications in multiexciton solar cells, infrared photodetectors, and electroluminescence devices. Here we report the synthesis and electrical measurements of hyperbranched PbSe nanowire networks. Hyperbranched PbSe nanowire networks are synthesized via a vapor-liquid-solid
Josef A Czaban et al.
Nano letters, 9(1), 148-154 (2009-01-16)
We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam
C Tessarek et al.
Optics express, 21(3), 2733-2740 (2013-03-14)
Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically
Prasana Sahoo et al.
Biosensors & bioelectronics, 44, 164-170 (2013-02-22)
We demonstrate a very simple and generic protocol for ultrasensitive in-situ label-free detection of DNA hybridization using third generation poly(amidoamine)dendrimer (G3-PAMAM) functionalized GaN nanowires (NWs). PAMAM modified GaN NWs provides large density of docking site to immobilize significant number of
Michael A Jakupec et al.
Metal ions in biological systems, 42, 425-462 (2004-06-23)
Gallium has been the second metal to show activity against malignant tumors in humans soon after the establishment of platinum drugs in routine clinical practice. It has the unique property of inhibiting tumor growth as a simple cation, mainly because

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