solid (dark blue)
average Mw 40,000-60,000 by GPC
820 nm (thin film)
HOMO 5.2 eV
Bottom gate top contact device with silane modified SiO2 dielectric.Processing method spin coating; thermal annealing at 140 °C/ 10 min
NONH for all modes of transport
Research. Development. Production.
We are a leading supplier to the global Life Science industry with solutions and services for research, biotechnology development and production, and pharmaceutical drug therapy development and production.