901790

Sigma-Aldrich

Boron nitride suspension

Synonym(s):
2D-hBN, 2D-Boron nitride dispersion with nonionic surfactant, 2D-BN, 2D-Boron nitride, Hexagonal boron nitride
Linear Formula:
BN
NACRES:
NA.23

description

100-2000 nm
thickness < 3 layers

concentration

5 mg/mL in H2O

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General description

Boron nitride suspension (h-BN) (5 mg/mL in water) has a hexagonal bonded structure, with high mechanical strength and good thermal conductivity. It belongs to the class of hexagonal layered materials. It has a direct band gap of 5.8 eV and can be used as a dielectric layer in electronic devices.

Application

2D-Hexagonal boron nitride (2D-hBN) is a structural isomorph of graphene and it possesses high chemical, mechanical and thermal stability. However, unlike graphene, the 2D-hBN is a high band gap material. The 2D-hBN exhibits exotic optical and electrical properties and find applications in field effect transistors (FETs), photoelectric devices and UV detectors.
h-BN can also be used as a multifunctional additive in polymeric electrolytes for the formation of lithium ion batteries. It can also be used in the fabrication of photonic devices.

RIDADR

NONH for all modes of transport

WGK Germany

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificate of Analysis
Certificate of Origin
Light-emitting diodes by bandstructure engineering in van der Waals heterostructures.
Withers F, et al.
Nature Materials, 14, 301-301 (2015)
Two dimensional hexagonal boron nitride (2D-hBN): Synthesis, properties and applications.
Zhang K ,et al.
Journal of Material Chemistry C, 5, 11992-11992 (2017)
Hexagonal boron nitride for deep ultraviolet photonic devices.
Jiang HX and Lin JY
Semiconductor Science and Technology, 29(8), 084003-084003 (2014)
The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes.
Pacile D, et al.
Applied Physics Letters, 92(13), 133107-133107 (2008)
Thermal conductivity and phonon transport in suspended few-layer hexagonal boron nitride.
Jo I, et al.
Nano Letters, 13(2), 550-554 (2013)

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