R2206

Sigma-Aldrich

Rubrene

powder

Synonym(s):
5,6,11,12-Tetraphenylnaphthacene
Empirical Formula (Hill Notation):
C42H28
CAS Number:
Molecular Weight:
532.67
Beilstein/REAXYS Number:
1917339
EC Number:
MDL number:
PubChem Substance ID:
NACRES:
NA.23

form

powder

Quality Level

mp

330-335 °C (lit.)

λmax

299 nm

OLED Device Performance

ITO/CuPc/NPD/Alq3:Rubrene (5%): DCM2 (2%)/Alq3/Mg:In

  • Color: red
  • Max. Luminance: 7780 Cd/m2

ITO/PEDOT:PSS/EHCz:Rubrene (1 wt%)/Cs2CO3:ITO
  • Color: red
  • Max. EQE: 0.03 %

SMILES string

c1ccc(cc1)-c2c3ccccc3c(-c4ccccc4)c5c(-c6ccccc6)c7ccccc7c(-c8ccccc8)c25

InChI

1S/C42H28/c1-5-17-29(18-6-1)37-33-25-13-14-26-34(33)39(31-21-9-3-10-22-31)42-40(32-23-11-4-12-24-32)36-28-16-15-27-35(36)38(41(37)42)30-19-7-2-8-20-30/h1-28H

InChI key

YYMBJDOZVAITBP-UHFFFAOYSA-N

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Application

Reagent for chemiluminescence research and for transition metal complex ligation.

Packaging

1 g in glass bottle
100 mg in glass insert

storage_class_code

13 - Non Combustible Solids

WGK Germany

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US),Eyeshields,Gloves

Certificate of Analysis

Certificate of Origin

Inorganic Chemistry, 32, 1078-1078 (1993)
Marina Pivetta et al.
The journal of physical chemistry. B, 113(14), 4578-4581 (2009-04-03)
The growth of rubrene (C(42)H(28), 5,6,11,12-tetraphenylnaphthacene) multilayer islands up to a thickness of six layers on a Au(111) surface has been investigated by scanning tunneling microscopy. The molecules self-organize in parallel twin rows, forming mirror domains of defined local structural...
E Dubuisson et al.
Nanotechnology, 20(31), 315301-315301 (2009-07-15)
To develop highly sensitive biosensors, we made directly available to biological aqueous solutions organic nanocrystals previously grown in the pores of sol-gel films. Through the controlled dissolution of the sol-gel surface, we obtained emerging nanocrystals that remained strongly anchored to...
Monolithic complementary inverters based on organic single crystals.
T Uemura et al.
Advanced materials (Deerfield Beach, Fla.), 22(35), 3938-3941 (2010-08-06)
Y Chen et al.
Advanced materials (Deerfield Beach, Fla.), 24(20), 2679-2684 (2012-04-14)
The origin of the bias stress effect related only to semiconductor properties is investigated in "air-gap" organic field-effect transistors (OFETs) in the absence of a material gate dielectric. The effect becomes stronger as the density of trap states in the...

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