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Back-gated OFET

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Keyword:'Back-gated OFET'

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Back-gated OFET Substrate

FIPMS176
n-doped silicon wafer with 230 nm SiO2 gate-insulator, chips (diced)

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Back-gated OFET Interdigitated Substrate

FIPMS223
Au source/drain, 90 nm SiO2 gate-insulator, varied W/L from 500 to 4000, 16 transistors per chip, chips (diced)

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