Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy, X-ray photoelectron spectroscopy, cathodoluminescence spectroscopy, optical microscopy, atomic force microscopy, and scanning electron microscopy. It was noticed that, in respect of both the substrates, when growth time and/or precursor-to-substrate distance is increased, thickness of the nanowires around the etch pits remains unaltered, but there is variation in the density of nanowires. In addition, formation of gallium nitride microwires within the etch pits was also observed on etched sapphire substrates. Similarly, the thickness and density of the microwires were found to increase with increase in growth time and decrease with increase in precursor-to-substrate distance. The dimensionality scaling of gallium nitride was found to have a positive effect in improving the luminescence property and band gap of the grown nanowires. This method of nanowire growth can be helpful in increasing the probability of multiple reflections in the materials which makes them a suitable candidate for optoelectronic devices.