Bias stress effect in "air-gap" organic field-effect transistors.

Advanced materials (Deerfield Beach, Fla.) (2012-04-14)
Y Chen, V Podzorov
ABSTRACT

The origin of the bias stress effect related only to semiconductor properties is investigated in "air-gap" organic field-effect transistors (OFETs) in the absence of a material gate dielectric. The effect becomes stronger as the density of trap states in the semiconductor increases. A theoretical model based on carrier trapping and relaxation in localized tail states is formulated. Polar molecular vapors in the gap of "air-gap" OFETs also have a significant impact on the bias stress effect via the formation of bound states between the charge carriers and molecular dipoles at the semiconductor surface.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Rubrene, sublimed grade, 99.99% trace metals basis
Sigma-Aldrich
Rubrene, ≥98%
Sigma-Aldrich
Rubrene, powder

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