• Home
  • Search Results
  • Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells.

Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells.

Optics express (2012-06-21)
A Lupu, M Tchernycheva, Y Kotsar, E Monroy, F H Julien
ABSTRACT

The aim of the present paper was to determine the index variation in the GaN/AlN heterostructures related to the population/depletion of the quantum well fundamental state leading to the absorption variation in the spectral domain around 1.5 µm. The variation of the refractive index was deduced from the shift of the position of the beating interference maxima of different order modes in a guided wave configuration. The obtained index variation with bias from complete depletion to full population of the quantum wells is around -5 × 10(-3). This value is similar to the typical index variation achieved in InP and is an order of magnitude higher than the index variation obtained in silicon.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Aluminum nitride, powder, 10 μm, ≥98%
Sigma-Aldrich
Aluminum nitride, nanopowder, <100 nm particle size
Sigma-Aldrich
Aluminum nitride, powder, -200 mesh, 99.8% trace metals basis