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Epitaxy of nanocrystalline silicon carbide on Si(111) at room temperature.

Journal of the American Chemical Society (2012-10-13)
Roberto Verucchi, Lucrezia Aversa, Marco V Nardi, Simone Taioli, Silvio a Beccara, Dario Alfè, Lucia Nasi, Francesca Rossi, Giancarlo Salviati, Salvatore Iannotta
ABSTRACT

Silicon carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting SiC-based technologies is the high-temperature synthesis. In this work, we provide unprecedented experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a buckminsterfullerene (C(60)) supersonic beam. Chemical processes, such as C(60) rupture, are activated at a precursor kinetic energy of 30-35 eV, far from thermodynamic equilibrium. This result paves the way for SiC synthesis on polymers or plastics that cannot withstand high temperatures.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Silicon carbide, −400 mesh particle size, ≥97.5%
Sigma-Aldrich
Silicon carbide, -200 mesh particle size
Sigma-Aldrich
Silicon carbide, nanopowder, <100 nm particle size