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  • Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers.

Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers.

Nanoscale (2012-12-25)
Lin Wang, Xiaolong Chen, Yang Wang, Zefei Wu, Wei Li, Yu Han, Mingwei Zhang, Yuheng He, Chao Zhu, Kwok Kwong Fung, Ning Wang
ABSTRACT

We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y(2)O(3) as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y(2)O(3)-covered SLG and a very few short-range impurities have been introduced by Y(2)O(3). Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y(2)O(3) layers.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Yttrium(III) oxide, 99.999% trace metals basis
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Yttrium(III) oxide, nanopowder, <50 nm particle size
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Yttrium(III) oxide, 99.99% trace metals basis
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Yttrium, chips, 99.9% trace rare earth metals basis
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Yttrium(III) oxide, dispersion, 10 wt. % in isopropanol, nanoparticles, <100 nm (DLS), ≥99.9% trace metals basis
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Yttrium sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.9% trace metals basis