EMAIL THIS PAGE TO A FRIEND

Advanced materials (Deerfield Beach, Fla.)

Bias stress effect in "air-gap" organic field-effect transistors.


PMID 22499410

Abstract

The origin of the bias stress effect related only to semiconductor properties is investigated in "air-gap" organic field-effect transistors (OFETs) in the absence of a material gate dielectric. The effect becomes stronger as the density of trap states in the semiconductor increases. A theoretical model based on carrier trapping and relaxation in localized tail states is formulated. Polar molecular vapors in the gap of "air-gap" OFETs also have a significant impact on the bias stress effect via the formation of bound states between the charge carriers and molecular dipoles at the semiconductor surface.

Related Materials