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Journal of nanoscience and nanotechnology

Threshold voltage fluctuation in 16-nm-gate FinFets induced by random work function of nanosized metal grain.


PMID 22905489

Abstract

The random work-function (WK) induced threshold voltage fluctuation (sigmaVth) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced sigmaVth are considered in the proposed equation analytically. The formula accounts for the inside of fluctuation and could be used for the assessment of effectiveness of suppression techniques.

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595063
Titanium nitride, <3 μm
NTi