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463078 Aldrich

Digermane

9-11% (balance is hydrogen), 99.99% (excluding germane and trigermane), 10% in hydrogen, electronic grade

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Properties

grade   electronic grade
assay   9-11% (balance is hydrogen)
  99.99% (excluding germane and trigermane)
form   gas
concentration   10% in hydrogen
bp   31.5 °C(lit.)
mp   −109 °C(lit.)
transition temp   critical temperature 150.9 °C

Description

Features and Benefits

Digermane is used for the deposition of amorphous and epitaxial germanium thin films. Digermane is also used in the formation of boron-doped SiGe alloy layers and with diborane in the formation of B-doped Ge(001) films, both by gas-source molecular-beam epitaxy (MBE).

Precursor to germanium and germanium-silicon alloy thin films.

Recommended products

Stainless steel regulators Z527416 or Z527424 are recommended.

Safety & Documentation

Safety Information

Symbol 
Signal word 
Warning
Precautionary statements 
RIDADR 
UN 1953PIHD 2.1(2.3)
WGK Germany 
3
Protocols & Articles

Articles

High Purity Deposition Gases

High Purity CVD Gases are used in the deposition of amorphous and epitaxial silicon, SiGe alloys, and dielectrics as well as the manufacture of integrated circuits and photovolatics. The gases are al...
Chemfiles Volume 4 Article 3
Keywords: Chemical vapor deposition, Deposition

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