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  • 553468 - Tris(tert-butoxy)silanol

553468 Sigma-Aldrich



Synonym: TBS

  • CAS Number 18166-43-3

  • Linear Formula ((CH3)3CO)3SiOH

  • Molecular Weight 264.43

  •  MDL number MFCD00271024

  •  PubChem Substance ID 24879332

  •  NACRES NA.23



Related Categories Materials Science, Micro/NanoElectronics, Silanes, Silicon, Solution Deposition Precursors More...
Quality Level   100
assay   99.999%
form   solid
bp   205-210 °C (lit.)
mp   63-65 °C (lit.)
SMILES string   CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C
InChI   1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3


General description

Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.


Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.


5, 25 g in glass bottle

Safety & Documentation

Safety Information

Personal Protective Equipment 
NONH for all modes of transport
WGK Germany 
Flash Point(F) 
Not applicable
Flash Point(C) 
Not applicable
Protocols & Articles


FePt Nanogranular Films for High Density Heat-assisted Magnetic Recording

Kazuhiro Hono, National Institute for Materials Research, Tsukuba 305-0047, Japan Email: kazuhiro.hono@nims.go.jp
Keywords: Deposition, Nucleic acid annealing

Low κ Precursors

Low κ materials address technical challenges of increased chip performance by allowing for the reduction of spacing between metals in multi-level interconnects, interlayer dielectrics and passivation...
Chemfiles Volume 4 Article 3
Keywords: Atomic layer deposition, Chemical vapor deposition, Chromatin immunoprecipitation, Reductions

Recent Progress in Spintronic Materials

Soubantika Palchoudhury,1 Karthik Ramasamy,2* Arunava Gupta3* 1Civil and Chemical Engineering, University of Tennessee at Chattanooga, Chattanooga, Tennessee 37403, USA 2Center for Integrated Nanotec...
Soubantika Palchoudhury, Karthik Ramasamy, Arunava Gupta
By: Dr. Hui Zhu, Material Matters, 2016, 11.4
Keywords: Catalysis, Microscopy, Scanning electron microscopy, Semiconductor, Transmission electron microscopy

Silicon Nitride Atomic Layer Deposition: A Brief Review of Precursor Chemistry

Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA *Email: jiyoung.kim@utdallas.edu
Keywords: Atomic layer deposition, Chemical vapor deposition, Deposition, Inductively coupled plasma, Ligands, Materials Science, Semiconductor, Size-exclusion chromatography

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Hybrid organic-inorganic sol-gel materials containing silica were first called “ORMOSILs” in 1984.1 Since then, the number of hybrid organicinorganic combinations has increased rapidly.2 Hybrid mater...
Lisa C. Klein and Andrei Jitianu
Material Matters, Volume 7, Number 2, 8–14
Keywords: Absorption, Adhesion, Calorimetry, Combustion, Condensations, Deposition, Exothermic, Filtration, Materials Science, Melting, Oxidations, Polymerization reactions, Purification, Semiconductor, Sol-gel, Solar cells, Solvents, Spin coating, Substitutions, Thermal analysis

Peer-Reviewed Papers


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