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235695 Sigma-Aldrich

Octamethylcyclotetrasiloxane

98%

  • CAS Number 556-67-2

  • Linear Formula [-Si(CH3)2O-]4

  • Molecular Weight 296.62

  •  Beilstein/REAXYS Number 1787074

  •  EC Number 209-136-7

  •  MDL number MFCD00003269

  •  PubChem Substance ID 24853994

  •  NACRES NA.23

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Properties

Related Categories Chemical Synthesis, Materials Science, Micro/NanoElectronics, Organometallic Reagents, Organosilicon,
Quality Level   200
vapor density   1 (vs air)
assay   98%
form   liquid
refractive index   n20/D 1.396 (lit.)
bp   175-176 °C (lit.)
mp   17-18 °C (lit.)
density   0.956 g/mL at 25 °C (lit.)
SMILES string   C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1
InChI   1S/C8H24O4Si4/c1-13(2)9-14(3,4)11-16(7,8)12-15(5,6)10-13/h1-8H3
InChI key   HMMGMWAXVFQUOA-UHFFFAOYSA-N

Description

General description

Octamethylcyclotetrasiloxane (D4) is a volatile methylsiloxane (VMS) with a relatively low molecular weight. This silicone fluid has a silicon-oxygen bond in a cyclic arrangement and methyl groups are attached to the silicon atom. D4 can be used in the manufacture of silicone based polymers for use in medical devices and personal care products.

Application

D4 can be polymerized through ring opening mechanism with a rare earth solid super acid as a catalyst for potential usage in the synthesis of vinyl coated polydimethylsiloxane (PDMS). It may also be used as a probe liquid for nuclear magnetic resonance cryoporometry (NMRC) to analyze the pore size distribution (PSD) of oil-bearing tight sandstone. Chemical vapor deposition (CVD) of D4 may be utilized for the preparation of siloxane based thin films.

Packaging

25, 100 g in glass bottle

Safety & Documentation

Safety Information

Symbol 
Signal word 
Warning
Hazard statements 
RIDADR 
UN 1993C 3 / PGIII
WGK Germany 
WGK 3
RTECS 
GZ4397000
Flash Point(F) 
123.8 °F - closed cup
Flash Point(C) 
51 °C - closed cup
Protocols & Articles

Articles

Low κ Precursors

Low κ materials address technical challenges of increased chip performance by allowing for the reduction of spacing between metals in multi-level interconnects, interlayer dielectrics and passivation...
Chemfiles Volume 4 Article 3
Keywords: Atomic layer deposition, Chemical vapor deposition, Chromatin immunoprecipitation, Reductions

Peer-Reviewed Papers
15

References

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