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445541 Sigma-Aldrich

Hafnium(IV) tert-butoxide

99.99% trace metals basis (purity excludes ~2000 ppm zirconium.)

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Properties

Related Categories Hafnium, Materials Science, Micro/NanoElectronics, Solution Deposition Precursors
InChI Key   WZVIPWQGBBCHJP-UHFFFAOYSA-N
assay   99.99% trace metals basis (purity excludes ~2000 ppm zirconium.)
form   liquid
refractive index   n20/D 1.424 (lit.)
bp   90 °C/5 mmHg(lit.)
density   1.166 g/mL at 25 °C (lit.)

Description

General description

Atomic number of base material: 72 Hafnium

Packaging

5 g in ampule

Safety & Documentation

Safety Information

Symbol 
Signal word 
Warning
Hazard statements 
Precautionary statements 
RIDADR 
UN 1993C 3 / PGIII
WGK Germany 
3
Flash Point(F) 
82.4 °F
Flash Point(C) 
28 °C

Documents

Certificate of Analysis

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Protocols & Articles

Articles

High Purity Metalorganic Precursors for CPV Device Fabrication

Thin film photovoltaic devices have become increasingly important in efficiently harnessing solar energy to meet consumer demand. Conventional crystalline silicon solar cells have demonstrated remark...
Ravi Kanjolia
Material Matters Volume 5 Article 4
Keywords: Absorption, Chemical vapor deposition, Degradations, Deposition, Mass spectrometry, Nuclear magnetic resonance spectroscopy, Purification, Semiconductor, Solar cells, Spectroscopy, Tissue microarrays, Vaporization

Peer-Reviewed Papers
15

References

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