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  • 759562 - Tris(dimethylamino)silane

759562 Aldrich


packaged for use in deposition systems

Synonym: Tris(dimethylamido)silane, (Me2N)3SiH, N,N,N′,N′,N′′, N′′-Hexamethylsilanetriamine, N,N,N′,N′,N′′,N′′-Hexamethylsilanetriamine, TDMAS, Tris(dimethylamido)silane, Tris(dimethylamino)silane



Related Categories CVD and ALD Precursors Packaged for Deposition Systems, Materials Science, Micro/NanoElectronics, Silane, Vapor Deposition Precursors More...
form   liquid
bp   142 °C(lit.)
mp   −90 °C(lit.)
density   0.838 g/mL at 25 °C(lit.)


Frequently Asked Questions

Frequently Asked Questions are available for this Product.


Tris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor.


25 g in stainless steel cylinder

Price and Availability

Safety & Documentation

Safety Information

Signal word 
Hazard statements 
Precautionary statements 
UN3398 - DOT UN3399 class 4.3 - PG 2 - Organometallic substance, liquid, water-reactive, HI: all (not BR)
WGK Germany 
Flash Point(F) 
17.6 - 32 °F
Flash Point(C) 
-8 - 0 °C

Frequently Asked Questions

Which document(s) contains shelf-life or expiration date information for a given product?
If available for a given product, the recommended re-test date or the expiration date can be found on the Certificate of Analysis. These documents are located on the product detail page under Useful Links & Tools. Click on the following link to search for a Certificate of Analysis. Please click the following link to see the details on our Product Dating Information.
How do I get lot-specific information or a Certificate of Analysis?
A Certificate of Analysis is available by lot number and can be obtained through our Advanced Search Option: http://www.sigmaaldrich.com/catalog/AdvancedSearchPage.do
How do I find price and availability?
There are several ways to find pricing and availability for our products.  Once you log onto our website, you will find the price and availability displayed on the product detail page. You can contact any of our Customer Sales and Service offices to receive a quote.  USA customers:  1-800-325-3010 or view local office numbers. 
What is the Department of Transportation shipping information for this product?
Transportation information can be found in Section 14 of the product's (M)SDS. To access the shipping information for this material, use the link on the product detail page for the product, or search here. 
My question is not addressed here, how can I contact Technical Service for assistance?
Use the option to the right to "Ask a Question" by email of a Technical Service Scientist.
Can the empty deposition cylinders be refilled?
Yes, we are able to refill these cylinders through our SAFC Hitech group.  Please contact our Technical Service department by email at techserv@sial.com, and they will forward you to the appropriate SAFC Hitech representative for a quote.
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Protocols & Articles


Nanowire Synthesis: From Top-Down to Bottom-Up

David J. Hill, James F. Cahoon* Department of Chemistry, University of North Carolina at Chapel Hill, USA *Email: jfcahoon@unc.edu
David J. Hill, James F. Cahoon*
Material Matters, 2017, 12.1
Keywords: Absorption, Catalysis, Chemical vapor deposition, Deposition, Electronics, Melting, Microelectronics, Nanomaterials, Redox Reactions, Reductions, Semiconductor

Recent Progress in Spintronic Materials

Soubantika Palchoudhury,1 Karthik Ramasamy,2* Arunava Gupta3* 1Civil and Chemical Engineering, University of Tennessee at Chattanooga, Chattanooga, Tennessee 37403, USA 2Center for Integrated Nanotec...
Soubantika Palchoudhury, Karthik Ramasamy, Arunava Gupta
By: Dr. Hui Zhu, Material Matters, 2016, 11.4
Keywords: Catalysis, Microscopy, Scanning electron microscopy, Semiconductor, Transmission electron microscopy

Peer-Reviewed Papers


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