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J100005 Sigma-Aldrich

Bis(trimethylsilyl)amidohafnium(IV) chloride

≥95%, ≥99.99% trace metals basis

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Properties

Related Categories CVD and ALD Precursors by Metal, Hafnium, Materials Science, Micro/NanoElectronics, Vapor Deposition Precursors More...
InChI Key   HKZRZVQUSXQGFM-UHFFFAOYSA-L
assay   ≥95%
  ≥99.99% trace metals basis
form   low-melting solid
mp   40-44 °C (lit.)
storage temp.   2-8°C

Description

General description

Atomic number of base material: 72 Hafnium

Packaging

5 g in glass bottle

Safety & Documentation

Safety Information

Symbol 
GHS05  GHS05
Signal word 
Danger
Hazard statements 
Precautionary statements 
RIDADR 
UN 3261 8 / PGII
WGK Germany 
3

Documents

Certificate of Analysis

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Protocols & Articles

Articles

High Purity Metalorganic Precursors for CPV Device Fabrication

Thin film photovoltaic devices have become increasingly important in efficiently harnessing solar energy to meet consumer demand. Conventional crystalline silicon solar cells have demonstrated remark...
Ravi Kanjolia
Material Matters Volume 5 Article 4
Keywords: Absorption, Chemical vapor deposition, Degradations, Deposition, Mass spectrometry, Nuclear magnetic resonance spectroscopy, Purification, Semiconductor, Solar cells, Spectroscopy, Tissue microarrays, Vaporization

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