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901790

Boron nitride suspension

Name: Boron nitride suspension
Brand: ALDRICH

Sinónimos:

2D-BN, 2D-Boron nitride, 2D-Boron nitride dispersion with nonionic surfactant, 2D-hBN, Hexagonal boron nitride

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Acerca de este artículo

Fórmula lineal:

NACRES:

NA.23

UNSPSC Code:

12352302

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Propiedades

description

100-2000 nm, thickness < 3 layers

form

suspension

concentration

5 mg/mL in H₂O

Descripción

General description

Boron nitride suspension (h-BN) (5 mg/mL in water) has a hexagonal bonded structure, with high mechanical strength and good thermal conductivity. It belongs to the class of hexagonal layered materials. It has a direct band gap of 5.8 eV and can be used as a dielectric layer in electronic devices.

Application

2D-Hexagonal boron nitride (2D-hBN) is a structural isomorph of graphene and it possesses high chemical, mechanical and thermal stability. However, unlike graphene, the 2D-hBN is a high band gap material. The 2D-hBN exhibits exotic optical and electrical properties and find applications in field effect transistors (FETs), photoelectric devices and UV detectors[1].

h-BN can also be used as a multifunctional additive in polymeric electrolytes for the formation of lithium ion batteries. It can also be used in the fabrication of photonic devices.

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Este artículo	901768	255475	920932
Sigma-Aldrich 901790 Boron nitride suspension	Sigma-Aldrich 901768 Boron nitride suspension	Sigma-Aldrich 255475 Boron nitride	Sigma-Aldrich 920932 Monolayer hexagonal Boron Nitride (hBN) on Si/SiO₂ wafer
description 100-2000 nm, thickness < 3 layers	description 100-2000 nm, thickness < 3 layers	description -	description Monolayer h-BN hBN Coverage: 100% with sporadic adlayers Bandgap: 5.97 eV Raman Peak: 1370 /cm^-1, Orientation: <1-0-0> Metal Impurities: 1.00e10 – 5.00e10 (at/cm²), Substrate Type/Doping: P/B Wafer Thickness : 500 ± 50 μm Oxide Thickness: 300 nm Resistivity: 1 – 10 (ohm/cm)
concentration 5 mg/mL in H₂O	concentration 1 mg/mL in H₂O	concentration -	concentration -
form suspension	form liquid	form powder	form -
2D hexagonal boron nitride dielectric layer	-	-	2D hexagonal boron nitride for nanophotonic applications, 6 eV wide-bandgap boron nitride, h-BN monolayer on Si/SiO<sub>2</sub> wafer, hBN wafer for micro/nano actuators, high-purity hexagonal boron nitride wafer, high-strength hexagonal boron nitride for electronic devices, laboratory-grade boron nitride for research applications, monolayer boron nitride for optoelectronic devices, monolayer hBN crystal for quantum communication, monolayer hBN for MEMS and NEMS devices, monolayer hexagonal boron nitride, optical functional hexagonal boron nitride materials, single-layer boron nitride for aerospace industry, transparent insulating coatings hexagonal boron nitride

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Clase de almacenamiento

12 - Non Combustible Liquids

wgk

WGK 2

flash_point_f

Not applicable

flash_point_c

Not applicable

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