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901790

Boron nitride suspension

Sinonimo/i:

2D-BN, 2D-Boron nitride, 2D-Boron nitride dispersion with nonionic surfactant, 2D-hBN, Hexagonal boron nitride

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Informazioni su questo articolo

Formula condensata:
BN
NACRES:
NA.23
UNSPSC Code:
12352302


description

100-2000 nm, thickness < 3 layers

form

suspension

concentration

5 mg/mL in H2O

General description

Boron nitride suspension (h-BN) (5 mg/mL in water) has a hexagonal bonded structure, with high mechanical strength and good thermal conductivity. It belongs to the class of hexagonal layered materials. It has a direct band gap of 5.8 eV and can be used as a dielectric layer in electronic devices.

Application

2D-Hexagonal boron nitride (2D-hBN) is a structural isomorph of graphene and it possesses high chemical, mechanical and thermal stability. However, unlike graphene, the 2D-hBN is a high band gap material. The 2D-hBN exhibits exotic optical and electrical properties and find applications in field effect transistors (FETs), photoelectric devices and UV detectors[1].
h-BN can also be used as a multifunctional additive in polymeric electrolytes for the formation of lithium ion batteries. It can also be used in the fabrication of photonic devices.

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255475901768920932
Boron nitride powder, ~1&#160;&#956;m, 98%

Sigma-Aldrich

255475

Boron nitride

concentration

5 mg/mL in H2O

concentration

-

concentration

1 mg/mL in H2O

concentration

-

form

suspension

form

powder

form

liquid

form

-

description

100-2000 nm, thickness < 3 layers

description

-

description

100-2000 nm, thickness < 3 layers

description

Monolayer h-BN
hBN Coverage: 100% with sporadic adlayers
Bandgap: 5.97 eV
Raman Peak: 1370 /cm-1, Orientation: <1-0-0>
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2), Substrate
Type/Doping: P/B
Wafer Thickness : 500 ± 50 μm
Oxide Thickness: 300 nm
Resistivity: 1 – 10 (ohm/cm)


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Classe di stoccaggio

12 - Non Combustible Liquids

wgk

WGK 2

flash_point_f

Not applicable

flash_point_c

Not applicable



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Two dimensional hexagonal boron nitride (2D-hBN): Synthesis, properties and applications.
Zhang K ,et al.
Journal of Material Chemistry C, 5, 11992-11992 (2017)
Light-emitting diodes by bandstructure engineering in van der Waals heterostructures.
Withers F, et al.
Nature Materials, 14, 301-301 (2015)
Boron nitride substrates for high-quality graphene electronics.
Dean CR, et al.
Nature Nanotechnology, 5(10), 722-722 (2010)



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SKUGTIN
901790-25ML04061838673442

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