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  • Deliberations and evaluations of the approaches, endpoints and paradigms for dietary recommendations of the other trace elements.

Deliberations and evaluations of the approaches, endpoints and paradigms for dietary recommendations of the other trace elements.

The Journal of nutrition (1996-09-01)
E O Uthus, C D Seaborn
RESUMEN

Circumstantial evidence suggests that aluminum, arsenic, bromine, cadmium, germanium, lead, lithium, nickel, rubidium, silicon, tin and vanadium are essential. The evidence is most compelling for arsenic, nickel, silicon and vanadium. The estimated daily dietary intakes for these elements are arsenic, 12-50 micrograms; nickel, 100 micrograms; silicon, 20-50 mg and vanadium, 10-20 micrograms. By extrapolation from animal studies, the daily dietary intakes of these elements needed to prevent deficiency or to provide beneficial action in humans are arsenic, 12-25 micrograms; nickel, 100 micrograms; silicon, 2-5 mg (based on 10% bioavailability in natural diets) and vanadium, 10 micrograms. Thus, the postulated need by humans for these elements can be met by typical diets. Because there may be situations, however, where dietary intake does not meet the postulated requirements, research is needed to derive status indicators in humans and to further study the relationships of low intake or impaired bioavailability of these ultratrace elements to various diseases.

MATERIALES
Número de producto
Marca
Descripción del producto

Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
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Nickel, powder, <50 μm, 99.7% trace metals basis
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Nickel, nanopowder, <100 nm avg. part. size, ≥99% trace metals basis
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Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
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Nickel, powder, <150 μm, 99.99% trace metals basis
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Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
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Nickel, foil, thickness 0.125 mm, ≥99.9%
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Nickel, foil, thickness 0.5 mm, 99.98% trace metals basis
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Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
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Nickel, powder, <1 μm, 99.8% trace metals basis
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Nickel, wire, diam. 0.25 mm, ≥99.9%
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Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
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Silicon, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
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Silicon, pieces, 99.95% trace metals basis
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Nickel, rod, diam. 6.35 mm, ≥99.99% trace metals basis
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Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
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Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
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Nickel, wire, diam. 0.5 mm, ≥99.9% trace metals basis
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Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
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Nickel, wire, diam. 0.5 mm, ≥99.99% trace metals basis
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Nickel, foil, thickness 0.1 mm, 99.98% trace metals basis
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Nickel, sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.95% trace metals basis
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Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
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Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
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Nickel, foil, thickness 0.25 mm, 99.995% trace metals basis