Tris(tert-butoxy)silanol

Name: Tris(<I>tert</I>-butoxy)silanol
Brand: ALDRICH
Price: 177 SGD

99.999%

Synonym(s):

TBS

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About This Item

Linear Formula:

((CH₃)₃CO)₃SiOH

CAS Number:

18166-43-3

Molecular Weight:

264.43

NACRES:

NA.23

PubChem Substance ID:

24879332

UNSPSC Code:

12352103

MDL number:

MFCD00271024

Key Documents

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Product Name

Tris(tert-butoxy)silanol, 99.999%

InChI

1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3

SMILES string

CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C

InChI key

HLDBBQREZCVBMA-UHFFFAOYSA-N

assay

99.999%

form

solid

bp

205-210 °C (lit.)

mp

63-65 °C (lit.)

Quality Level

100

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Show Differences

1 of 4

This Item	360716	553441	902489
Sigma-Aldrich 553468 Tris(tert-butoxy)silanol	Sigma-Aldrich 360716 Tris(trimethylsilyl)silane	Sigma-Aldrich 553441 Tris(tert-pentoxy)silanol	Sigma-Aldrich 902489 Tris(trimethylsilyl)silanol
assay 99.999%	assay 97%	assay ≥99.99%	assay ≥95%
form solid	form liquid	form liquid	form liquid
mp 63-65 °C (lit.)	mp -	mp -	mp -
bp 205-210 °C (lit.)	bp 73 °C/5 mmHg (lit.)	bp 96-99 °C/2-3 mmHg (lit.)	bp -
Quality Level 100	Quality Level 100	Quality Level 100	Quality Level -

Application

Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH₃)₂)₄) for vapor phase deposition of hafnium silicate glass films.[1] Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.[2][3]

General description

Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.[1]

Storage Class

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

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Rapid vapor deposition of highly conformal silica nanolaminates.

Hausmann D, et al.

Science, 298(5592), 402-406 null

Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol.

Burton B, et al.

Chemistry of Materials, 20, 7031-7043 (2008)

Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics.

Gordon G, et al.

Chemistry of Materials, 13(8), 2463-2464 (2001)

Analysis of wntless (WLS) expression in gastric, ovarian, and breast cancers reveals a strong association with HER2 overexpression.

Jonathan Stewart et al.

Modern pathology : an official journal of the United States and Canadian Academy of Pathology, Inc, 28(3), 428-436 (2014-09-27)

The oncogenic role of WNT is well characterized. Wntless (WLS) (also known as GPR177, or Evi), a key modulator of WNT protein secretion, was recently found to be highly overexpressed in malignant astrocytomas. We hypothesized that this molecule may be

Amyloid-β pathology is attenuated by tauroursodeoxycholic acid treatment in APP/PS1 mice after disease onset.

Pedro A Dionísio et al.

Neurobiology of aging, 36(1), 228-240 (2014-12-03)

Alzheimer's disease (AD) is a neurodegenerative disorder hallmarked by the accumulation of extracellular amyloid-β (Aβ) peptide and intraneuronal hyperphosphorylated tau, as well as chronic neuroinflammation. Tauroursodeoxycholic acid (TUDCA) is an endogenous anti-apoptotic bile acid with potent neuroprotective properties in several

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Tris(tert-butoxy)silanol