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Merck

510823

Poly(3-hexylthiophene-2,5-diyl)

greener alternative

regioregular

Synonym(s):

P3HT

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1 G

€559.30

€559.30

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About This Item

Linear Formula:
(C10H14S)n
CAS Number:
UNSPSC Code:
12352103
NACRES:
NA.23
MDL number:

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Product Name

Poly(3-hexylthiophene-2,5-diyl), regioregular

SMILES string

[s]1c(c(cc1Br)CCCCCC)Br

InChI key

NSYFIAVPXHGRSH-UHFFFAOYSA-N

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color

red

mp

238 °C

solubility

chloroform, methylene chloride, toluene, and THF: soluble

fluorescence

λex 420 nm; λem 551 nm in chloroform

OPV device performance

ITO/NiO/P3HT/PC61BM/LiF/Al

  • Short-circuit current density (Jsc): 11.3 mA/cm2
  • Open-circuit voltage (Voc): 0.64 V
  • Fill Factor (FF): 0.69
  • Power Conversion Efficiency (PCE): 5.16 %

ITO/PEDOT:PSS/P3HT:PC61BM (1:08)/Al
  • Short-circuit current density (Jsc): 9.5 mA/cm2
  • Open-circuit voltage (Voc): 0.63 V
  • Fill Factor (FF): 0.68
  • Power Conversion Efficiency (PCE): 5 %

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Quality Level

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This Item
445703900563900550
mp

238 °C

mp

238 °C

mp

-

mp

-

color

red

color

-

color

-

color

-

solubility

chloroform, methylene chloride, toluene, and THF: soluble

solubility

-

solubility

-

solubility

-

fluorescence

λex 420 nm; λem 551 nm in chloroform

fluorescence

λex 443 nm; λem 568 nm in chloroform

fluorescence

-

fluorescence

-

OPV device performance

ITO/NiO/P3HT/PC61BM/LiF/Al

  • Short-circuit current density (Jsc): 11.3 mA/cm2
  • Open-circuit voltage (Voc): 0.64 V
  • Fill Factor (FF): 0.69
  • Power Conversion Efficiency (PCE): 5.16 %

OPV device performance

ITO/NiO/P3HT/PC61BM/LiF/Al

  • Short-circuit current density (Jsc): 11.3 mA/cm2
  • Open-circuit voltage (Voc): 0.64 V
  • Fill Factor (FF): 0.69
  • Power Conversion Efficiency (PCE): 5.16 %
, ITO/PEDOT:PSS/P3HT:PC61BM (1:08)/Al
  • Short-circuit current density (Jsc): 9.5 mA/cm2
  • Open-circuit voltage (Voc): 0.63 V
  • Fill Factor (FF): 0.68
  • Power Conversion Efficiency (PCE): 5 %

OPV device performance

-

OPV device performance

-

Quality Level

100

Quality Level

100

Quality Level

100

Quality Level

100

Application

P3HT is a conducting polymer that can be used in the fabrication of a variety of devices which include solar cells, field effect transistors (FETs), light emitting diodes (LEDs) and photovoltaic cells.[1][2][3][4]
This material has solid state properties.[5]

General description

1:1 (head-to-head):(head-to-tail) linkages of regioisomers
Poly(3-hexylthiophene-2,5-diyl) (P3HT) is a poly(alkylthiophene) based semiconducting polymer that is hydrophobic at the neutral state and has π-π conjugation as a backbone. It′s hole mobility is in the range of 10-3-10-1cm2V-1s-1 and it can be mainly used in the development of organic electronic based devices.[6]
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Legal Information

Product of Rieke Metals, Inc.
Rieke is a registered trademark of Rieke Metals, Inc.

Packaging

Packaged in glass bottles

pictograms

Exclamation mark

signalword

Warning

Hazard Classifications

Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

target_organs

Respiratory system

Storage Class

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves


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Effect of the end group of regioregular poly (3-hexylthiophene) polymers on the performance of polymer/fullerene solar cells
Kim Y, et al.
The Journal of Physical Chemistry C, 111(23), 8137-8141 (2007)
Block copolymer containing poly (3-hexylthiophene) and poly (4-vinylpyridine): Synthesis and its interaction with CdSe quantum dots for hybrid organic applications
Palaniappan K, et al.
Journal of Polymer Science Part A: Polymer Chemistry, 49(8), 1802-1808 (2011)
Effect of doping of zinc oxide on the hole mobility of poly (3-hexylthiophene) in hybrid transistors
Hammer MS, et al.
Organic Electronics, 11(9), 1569-1577 (2010)
Morphological stabilization of polymer photovoltaic cells by using cross-linkable poly (3-(5-hexenyl) thiophene).
Miyanishi S, et al.
Macromolecules, 42(5), 1610-1618 (2009)
Flexible Transistors Exploiting P3HT on Paper Substrate and Graphene Oxide Film as Gate Dielectric: Proof of Concept.
Valentini L, et al.
Science of Advanced Materials, 5(5), 530-533 (2013)

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