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647705

Silizium

Name: Silizium
Brand: ALDRICH
Price: 152 EUR

wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

Umweltfreundlichere Alternative

Synonym(e):

Silicon element

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Größe/SKU	Verfügbarkeit	Preis
1 ea	Warenkorb auf Verfügbarkeit prüfen	€ 152,00

Über diesen Artikel

Lineare Formel:

CAS-Nummer:

7440-21-3

Molekulargewicht:

28.09

NACRES:

NA.23

PubChem Substance ID:

24883420

UNSPSC Code:

12352300

MDL number:

MFCD00085311

€ 152,00

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Eigenschaften

Quality Segment

100

form

crystalline (cubic (a = 5.4037)), wafer

contains

boron as dopant

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

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diam. × thickness

2 in. × 0.3 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

Enabling

semiconductor properties

<111>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

Beschreibung

General description

0 vortex defects. Etch pitch density (EPD) < 100 (cm^-2). Resistivity 10^-3- 40Ωcm

Oxygen content: <= 1~1.8 x 10¹⁸/cm³; Carbon content: <= 5 x 10¹⁶/cm³; Boule diameter: 1~8 ″

We are committed to bringing you Greener Alternative Products, which belongs to one of the four categories of greener alternatives. This enabling product has been enhanced for energy efficiency. Click here for more information.

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Dieser Artikel	647764	647543	647799
Sigma-Aldrich 647705 Silizium	Sigma-Aldrich 647764 Silizium	Sigma-Aldrich 647543 Silizium	Sigma-Aldrich 647799 Silizium
description wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm	description wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm	description wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm	description wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm
form wafer, crystalline (cubic (a = 5.4037))	form wafer (single side polished), crystalline (cubic (a = 5.4037))	form crystalline (cubic (a = 5.4037)), wafer (single side polished)	form crystalline (cubic (a = 5.4037)), wafer (single side polished)
bp 2355 °C (lit.)	bp 2355 °C (lit.)	bp 2355 °C (lit.)	bp 2355 °C (lit.)
Quality Level 100	Quality Level 100	Quality Level 100	Quality Level 100
density 2.33 g/mL at 25 °C (lit.)	density 2.33 g/mL at 25 °C (lit.)	density 2.33 g/mL at 25 °C (lit.)	density 2.33 g/mL at 25 °C (lit.)
mp 1410 °C (lit.)	mp 1410 °C (lit.)	mp 1410 °C (lit.)	mp 1410 °C (lit.)
contains boron as dopant	contains boron as dopant	contains -	contains phosphorus as dopant

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