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  • Evidence of sulfur-bound reduced copper in bamboo exposed to high silicon and copper concentrations.

Evidence of sulfur-bound reduced copper in bamboo exposed to high silicon and copper concentrations.

Environmental pollution (Barking, Essex : 1987) (2014-01-15)
Blanche Collin, Emmanuel Doelsch, Catherine Keller, Patrick Cazevieille, Marie Tella, Perrine Chaurand, Frédéric Panfili, Jean-Louis Hazemann, Jean-Dominique Meunier
ZUSAMMENFASSUNG

We examined copper (Cu) absorption, distribution and toxicity and the role of a silicon (Si) supplementation in the bamboo Phyllostachys fastuosa. Bamboos were maintained in hydroponics for 4 months and submitted to two different Cu (1.5 and 100 μm Cu(2+)) and Si (0 and 1.1 mM) concentrations. Cu and Si partitioning and Cu speciation were investigated by chemical analysis, microscopic and spectroscopic techniques. Copper was present as Cu(I) and Cu(II) depending on plant parts. Bamboo mainly coped with high Cu exposure by: (i) high Cu sequestration in the root (ii) Cu(II) binding to amino and carboxyl ligands in roots, and (iii) Cu(I) complexation with both organic and inorganic sulfur ligands in stems and leaves. Silicon supplementation decreased the visible damage induced by high Cu exposure and modified Cu speciation in the leaves where a higher proportion of Cu was present as inorganic Cu(I)S compounds, which may be less toxic.

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Silizium, powder, −325 mesh, 99% trace metals basis
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Silizium, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
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Silizium, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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Silizium, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
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Silizium, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
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Silizium, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
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Silizium, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
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Silizium, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
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Silizium, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
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Silizium, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Silikon, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
Silikon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
Silizium, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
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Silikon, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%
Silizium, sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%
Silikon, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%
Silikon, disks, 13mm, thickness 0.38mm, single crystal, 100%
Silikon, rod, 50mm, diameter 2.0mm, crystalline, 100%
Silikon, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
Silikon, rod, 50mm, diameter 5mm, single crystal, -100, 99.999%
Silikon, rod, 100mm, diameter 25mm, crystalline, 100%