The effect of growth temperature variation on partially bismuth filled carbon nanotubes synthesis using a soft semi-metallic template.

The effect of growth temperature variation on partially bismuth filled carbon nanotubes synthesis using a soft semi-metallic template.

Journal of nanoscience and nanotechnology (2014-04-18)

R K Sahoo, C Jacob

ZUSAMMENFASSUNG

The dewetting of a low melting point metal thin film deposited on silicon substrates was studied. The experimental results suggest that the change in the growth temperature affects the nanostructures that form. Based on the experimental results, the temperature which yielded the smallest features for the growth of nanotubes is determined. The mechanism by which these nano-templates become an efficient seeds for the growth of the carbon nanotubes is discussed. The partial bismuth filling inside the CNTs was optimized. Based on the results, a schematic growth model for better understanding of the process parameters has also been proposed.

MATERIALIEN

Produktnummer

Marke

Produktbeschreibung

215619

Sigma-Aldrich

Silizium, powder, −325 mesh, 99% trace metals basis

646687

Sigma-Aldrich

Silizium, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

633097

Sigma-Aldrich

Silizium, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis

265462

Sigma-Aldrich

Bismut, powder, −100 mesh, 99% trace metals basis

264008

Sigma-Aldrich

Bismut, powder, −100 mesh, ≥99.99% trace metals basis

95372

Sigma-Aldrich

Bismut, granular, ≥99.99% trace metals basis

647101

Sigma-Aldrich

Silizium, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

556130

Sigma-Aldrich

Bismut, pieces, 1-12 mm, 99.999% trace metals basis

647764

Sigma-Aldrich

Silizium, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647675

Sigma-Aldrich

Silizium, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

265470

Sigma-Aldrich

Bismut, shot, 4-30 mesh, 99.9% trace metals basis

647535

Sigma-Aldrich

Silizium, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

647799

Sigma-Aldrich

Silizium, wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm

343250

Sigma-Aldrich

Silizium, pieces, 99.95% trace metals basis

647705

Sigma-Aldrich

Silizium, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

647780

Sigma-Aldrich

Silizium, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm

647802

Sigma-Aldrich

Silizium, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm

647772

Sigma-Aldrich

Silizium, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647543

Sigma-Aldrich

Silizium, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

GF73529051

Silikon, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%

452386

Sigma-Aldrich

Bismut, beads, 1-5 mm, 99.999% trace metals basis

GF46268433

Silikon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%

GF91141792

Silizium, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%

GF71817543

Silikon, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%

GF85045631

Bismut, foil, not light tested, 50x50mm, thickness 0.01mm, permanent polyester support, 99.97%

GF89918500

Bismut, foil, 25x25mm, thickness 0.25mm, 100%

GF10907377

Silikon, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%

GF85621923

Silizium, sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%

GF70438518

Silikon, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%

GF09816307

Bismut, foil, light tested, 50x50mm, thickness 0.02mm, permanent polyester support, 99.97%