The S20 device is designed for biosensing, while the S10 model is recommended for detecting other chemicals.
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GRFETS20
Graphene FET chip
S20
Synonym(e):
2-probe FET device, 2-probe Graphene FET sensor, Chemical gated Graphene FET, GFET S20, Graphene field effect transistor chip S20
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| Größe/SKU | Verfügbarkeit | Preis |
|---|---|---|
1 ea | Warenkorb auf Verfügbarkeit prüfen | € 575,00 |
Über diesen Artikel
NACRES:
NA.23
UNSPSC Code:
43211915
Technischer Dienst
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Unterstützung erhaltendescription
Absolute Maximum Ratings
Maximum gate-source voltage: ± 50 V
Maximum temperature rating: 150 °C
Maximum drain-source current density: 107 A/cm2, Chip dimensions: 10 mm x 10 mm, Chip thickness: 675 μm, Dirac point: < 50 V
Yield >75%, Encapsulation: 50 nm Al2O3 + 100 nm Si3N4, Gate oxide materials: 90 nm SiO2, Graphene field-effect mobility: >1000 cm2/V·s, Monolayer CVD grown Graphene based 2-probe field effect transistors (FET)., Number of devices per chip: 12, Resistivity of substrate: 1-10 Ω·cm
Metallization: Chromium/Gold-Palladium 2/50 nm
General description
Device configuration:
The graphene FET-S20 chip is designed for measurements in liquid medium. This chip provides 12 graphene devices, with encapsulation on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode.
The graphene FET-S20 chip is designed for measurements in liquid medium. This chip provides 12 graphene devices, with encapsulation on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode.
Graphene FET chip (GFET-S20 chip) is a graphene based field effect transistor which can be coated on silicon substrate by atmospheric pressure chemical vapor deposition (CVD). It also has similar gate insulators in the source and drain.
Application
GFET-S20 chip can be used as a biosensor and a chemical sensor for biological applications.
Features and Benefits
Device Features:
- State-of-the-art GFETs utilizing consistently high-quality CVD monolayer graphene
- Metallic contacts and metal/graphene interface are encapsulated to avoid degradation and reduce leakage current in liquid environment
- Perfect platform device for new sensor research and development
- 12 individual GFETs per chip
- A central gate electrode
1 of 1
Dieser Artikel | |||
|---|---|---|---|
| description S20 | description S10 | description L × W 1 cm × 1 cm, avg. no. of layers, 1 | description 1 in x 1 in on copper foil, avg. no. of layers, 1 |
| description Graphene field-effect mobility: >1000 cm2/V·s, Gate oxide materials: 90 nm SiO2, Encapsulation: 50 nm Al2O3 + 100 nm Si3N4, Absolute Maximum Ratings | description Gate Oxide material: SiO2, Resistivity of substrate: 1-10 Ω·cm, Graphene field-effect mobility: >1000 cm2/V·s, Gate Oxide thickness: 90 nm, Residual charge carrier density: <2 x 1012 cm-2, Maximum gate-source voltage: ± 50 V | description - | description FET Electron Mobility on Al2O3: 2;000 cm2/V·s, Grain size: Up to 10 μm, Coverage: >95%, Transparency: >97%, FET Electron Mobility on SiO2/Si (expected): 4; 000 cm2/V·s, Number of graphene layers: 1 |
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Flammpunkt (°F)
Not applicable
Flammpunkt (°C)
Not applicable
Zulassungslistungen
Zulassungslistungen werden hauptsächlich für chemische Produkte erstellt. Für nicht-chemische Produkte können hier nur begrenzte Angaben gemacht werden. Kein Eintrag bedeutet, dass keine der Komponenten gelistet ist. Es liegt in der Verantwortung des Benutzers, die sichere und legale Verwendung des Produkts zu gewährleisten.
7440-47-3
CAS No.
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Can the GFET-S20 Graphene FET chip be used in air or vacuum environments for detecting other chemicals?
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