The resistivity for this product is 10-3 - 40 Ω•cm as listed in the DESCRIPTION section under 'Physical Properties'.
647675
Silicon
wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Greener Alternative
Synonym(s):
Silicon element
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| Size/SKU | Availability | Price |
|---|---|---|
1 set | Available to ship TODAYfromMILWAUKEE | $172.00 $129.00 |
5 ea | Available to ship TODAYfromMILWAUKEE | $589.00 $441.75 |
About This Item
Linear Formula:
Si
CAS Number:
Molecular Weight:
28.09
PubChem Substance ID:
UNSPSC Code:
12352300
MDL number:
NACRES:
NA.23
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Quality Segment
form
crystalline (cubic (a = 5.4037)), wafer (single side polished)
contains
boron as dopant
greener alternative product characteristics
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diam. × thickness
2 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
greener alternative category
semiconductor properties
<100>, P-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
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Application
<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.
Packaging
1EA refers to 1 wafer and 5EA refers to 5 wafers
1 of 1
This Item | |||
|---|---|---|---|
| description wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm | description nanoparticles, 40 nm avg. part. size, ≥99% trace metals basis | description disks, 13mm, thickness 0.38mm, single crystal, 100% | description rod, 50mm, diameter 5.0mm, crystalline, 100% |
| form wafer (single side polished), crystalline (cubic (a = 5.4037)) | form powder or crystals, nanoparticles | form foil | form rod |
| Quality Level 100 | Quality Level 100 | Quality Level - | Quality Level - |
| density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) |
| mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) |
| bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) |
| semiconductor properties <100>, P-type | semiconductor properties - | semiconductor properties - | semiconductor properties - |
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sheet resistance of 647675 of silicon
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