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647772

Silicon

wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

greener alternative

Greener Alternative

Synonym(s):

Silicon element

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Size/SKUAvailabilityPrice
5 ea

Available to ship TODAYfromMILWAUKEE

$418.00

About This Item

Linear Formula:
Si
CAS Number:
Molecular Weight:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
MDL number:

$418.00


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Quality Segment

form

crystalline (cubic (a = 5.4037)), wafer (single side polished)

contains

boron as dopant

greener alternative product characteristics

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diam. × thickness

3 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

semiconductor properties

<111>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

General description

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
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This Item
GF14076930GF75683212GF41762493
description

wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

description

rod, 50mm, diameter 5.0mm, crystalline, 100%

description

sheet, 14x14mm, thickness 1.0mm, single crystal, -100, 100%

description

sheet, 25x25mm, thickness 1.0mm, single crystal, -100, 100%

form

crystalline (cubic (a = 5.4037)), wafer (single side polished)

form

rod

form

rod

form

foil

Quality Level

100

Quality Level

-

Quality Level

-

Quality Level

-

mp

1410 °C (lit.)

mp

1410 °C (lit.)

mp

1410 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

bp

2355 °C (lit.)

bp

2355 °C (lit.)

bp

2355 °C (lit.)

bp

2355 °C (lit.)

contains

boron as dopant

contains

-

contains

-

contains

-


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