647780
Silicon
wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Greener Alternative
Synonym(s):
Silicon element
Select a Size
| Size/SKU | Availability | Price |
|---|---|---|
1 ea | Available to ship TODAY | $125.00 $93.75 |
5 ea | Check Cart for Availability | $434.00 $325.50 |
About This Item
$93.75
List Price$125.00Save 25%Available to ship TODAYDetails
Quality Segment
form
crystalline (cubic (a = 5.4037)), wafer (single side polished)
contains
phosphorus as dopant
greener alternative product characteristics
Design for Energy Efficiency
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sustainability
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resistivity
1-10 Ω-cm
diam. × thickness
2 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
greener alternative category
semiconductor properties
<100>, N-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
1 of 1
This Item | |||
|---|---|---|---|
| description wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm | description nanoparticles, 40 nm avg. part. size, ≥99% trace metals basis | description disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100% | description rod, 50mm, diameter 5.0mm, crystalline, 100% |
| form wafer (single side polished), crystalline (cubic (a = 5.4037)) | form powder or crystals, nanoparticles | form foil | form rod |
| bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) |
| Quality Level 100 | Quality Level 100 | Quality Level - | Quality Level - |
| mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) |
| density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) |
| sustainability Greener Alternative Product | sustainability Greener Alternative Product | sustainability - | sustainability - |
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