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647799

Silicon

wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm

greener alternative

Greener Alternative

Synonym(s):

Silicon element

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1 ea
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$128.00

About This Item

Linear Formula:
Si
CAS Number:
Molecular Weight:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
MDL number:

$128.00


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Quality Segment

form

crystalline (cubic (a = 5.4037)), wafer (single side polished)

contains

phosphorus as dopant

greener alternative product characteristics

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diam. × thickness

2 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

semiconductor properties

<111>, N-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

General description

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
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This Item
GF16286227GF14076930GF44956187
description

wafer (single side polished), contains phosphorus as dopant, <111>, N-type, diam. × thickness 2 in. × 0.5 mm

description

disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%

description

rod, 50mm, diameter 5.0mm, crystalline, 100%

description

rod, 25 mm diameter, length 150 mm, purity 99.999%

form

crystalline (cubic (a = 5.4037)), wafer (single side polished)

form

foil

form

rod

form

rod

mp

1410 °C (lit.)

mp

1410 °C (lit.)

mp

1410 °C (lit.)

mp

1410 °C (lit.)

Quality Level

100

Quality Level

-

Quality Level

-

Quality Level

-

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

bp

2355 °C (lit.)

bp

2355 °C (lit.)

bp

2355 °C (lit.)

bp

2355 °C (lit.)

semiconductor properties

<111>, N-type

semiconductor properties

-

semiconductor properties

-

semiconductor properties

-


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Storage Class

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