647705
Silicon
wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sustainability features
Synonym(s):
Silicon element
Select a Size
| Size/SKU | Availability | Price |
|---|---|---|
1 ea | Check Cart for Availability | $178.00 |
About This Item
Quality Segment
form
crystalline (cubic (a = 5.4037)), wafer
contains
boron as dopant
sustainability
Sustainability features
diam. × thickness
2 in. × 0.3 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
semiconductor properties
<111>, P-type
SMILES string
[Si]
InChI
1S/Si
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
General description
1 of 1
This Item | |||
|---|---|---|---|
| description wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm | description nanoparticles, 40 nm avg. part. size, ≥99% trace metals basis | description disks, 13mm, thickness 0.38mm, single crystal, 100% | description disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100% |
| form crystalline (cubic (a = 5.4037)), wafer | form powder or crystals, nanoparticles | form foil | form foil |
| bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) | bp 2355 °C (lit.) |
| Quality Level 100 | Quality Level 100 | Quality Level - | Quality Level - |
| density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) | density 2.33 g/mL at 25 °C (lit.) |
| mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) | mp 1410 °C (lit.) |
| contains boron as dopant | contains - | contains - | contains - |
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